SERVICES
SiPhotonIC currently offers the following prototyping pathways.
Refer to the respective factsheets to find more about our main integration capabilities, materials and our prototyping/ordering manual.
E-beam lithography (EBL) nanofabrication
EBL lithography is a powerful lithographic process that allows users to pattern very small photonic structures with dimensions ranging from sub-micrometer down to a few nanometers.
EBL features:
- High resolution lithography
- Structures with critical dimensions down to ~10 nm (limitations apply)
- Highly accurate & maskless patterning
- High aspect ratio structures
Deep-UV (DUV) lithography nanofabrication
DUV lithography is a well-established lithographic process that allows users to pattern photonic structures of medium resolution requirements with the use of DUV light and a photomask/photoresist.
DUV lithography features:
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Medium & small resolution lithography
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Structures with critical dimensions down to ~200 nm
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Developing multiple chips on wafer scale for volume
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Fast & flexible iteration of the designs on a wafer
Deposition / Etching / Other processes
SiPhotonIC can provide several deposition, etching and back-end processes.
Deposition: A large number of materials can be deposited through plasma-enhanced, e-beam evaporation and sputtering techniques. Common semiconductor fabrication thin film deposition processes are also offered.
Etching: Both wet etching and dry etching options are available. A total of 8 plasma assisted (ICP) tools for dry etching and several etch baths for wet chemical etching can be used.
Other processes: dicing (saw dicing, stealth dicing), SEM imaging, in-line characterization (upon request), packaging (upon request)
Photonic platforms
You can design and submit your project to us by using:
- Our standard Silicon-on-Insulator (SOI) platforms:
SiPhotonIC offers two SOI platforms, 220 nm- and 250 nm-thick SOI for 1550 nm applications, with verified photonic components and PDK libraries. Both platforms come in “Standard SOI” and “Improved SOI” versions. The Standard SOI can be typically used for optical communications, sensing and other generic applications, while the Improved SOI (<1 dB coupling) can be used for applications where coupling loss is critical, such as quantum photonics, since it employs Al mirror-assisted optical couplers.
Standard SOI platform
| Typical components | Performances |
| Grating coupler | coupling loss: <3.5 dB |
| Strip waveguide | Propagation loss: <2.5dB/cm |
| Mach–Zehnder interferometer | Insertion loss: <0.1dB |
| Cross intersection | Insertion loss:~0.1dB/cross Crosstalk: <-40dB |
| Thermal tunable phase shifter | Tunability: > 2π |
Advanced SOI platform
| Typical components | Performances |
| Grating coupler | coupling loss: <1.2 dB |
| Strip waveguide | Propagation loss: <2.5dB/cm |
| Mach–Zehnder interferometer | Insertion loss: <0.1dB |
| Cross intersection | Insertion loss:~0.1dB/cross Crosstalk: <-40dB |
| Thermal tunable phase shifter | Tunability: > 2π |
Design flexibility
We give you flexibility to design your PICs by supporting the following PDKs and options for its standard components.
OptoDesigner
IPKISS
libraries to use with L-edit IC, Nazca, GDS Factory etc.
- Custom components, stacks & processes
SiPhotonIC allows you also to submit your custom projects for rapid prototyping:- Custom-designed components based on our platforms’ generic specifications (220 nm / 250nm SOI)
- Custom integration stacks with the materials and layers of your choice
- Custom processes on your provided chips/wafers or part of your fabrication procedure
How can you order?
Check our Prototyping Manual for all options, volumes and delivery times.
You may contact us anytime @ info@siphotonic.com with a checklist of your required options for your project.