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Ebeam lithography based nano-fabrication

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100kV E-Beam Writer JBX-9500FSZ

Advanced silicon etching machine

Demonstration of chip-to-chip quantum teleportation

We report the first experimental demonstration of chip-to-chip teleportation of quantum states of light. Integrated quantum transceivers in silicon are able to prepare, manipulate, distribute and transceive quantum photonic states with high fidelity.

Generation and sampling of quantum states of light in a silicon chip

AbstractImplementing large instances of quantum algorithms requires the processing of many quantum information carriers in a hardware platform that supports the integration of different components. Although established semiconductor fabrication processes can integrate...

SiPhotonIC fabricates your designs based on high-precision ebeam lithography (EBL) and advanced silicon etching (ASE) silicon nano-fabrication. Your chip sample(s) are delivered to you with short turn-around time (typ. 2-3 months after design submission). The typical feature size limit of our nano-fabrication is ~40nm for EBL + etching process, 50~100nm for EBL + liftoff process (depending on metal thickness), as shown below. A ~10-20nm minimum feature size can also be resolved for some applications.

Scanning electron microscope image of fabricated silicon inverse taper with tip width of 40nm.

Scanning electron microscope image of a fabricated plasmonic slot waveguide with 100nm gap and 100nm thick Au layer, coupled by silicon waveguide.

Platforms

We have matured library on silicon-on-insulator with 250nm thick top silicon-layer. We provide nano-fabrication on standard silicon-on-insulator platform and advanced silicon-on-insulator platform with Al mirror. Standard silicon-on-insulator platform can be used for optical communication, such as microwave photonics, while advanced silicon-on-insulator platform can be used for on-chip quantum photonics where coupling loss is critical. Typical specifications are shown as follows.

Standard SOI platform

Typical components Performances
Grating coupler coupling loss: <3.5 dB
Strip waveguide Propagation loss: <2.5dB/cm
Mach–Zehnder interferometer Insertion loss: <0.1dB
Cross intersection Insertion loss:~0.1dB/cross Crosstalk: <-40dB
Thermal tunable phase shifter Tunability: > 2π

Advanced SOI platform

Typical components Performances
Grating coupler coupling loss: <1.2 dB
Strip waveguide Propagation loss: <2.5dB/cm
Mach–Zehnder interferometer Insertion loss: <0.1dB
Cross intersection Insertion loss:~0.1dB/cross Crosstalk: <-40dB
Thermal tunable phase shifter Tunability: > 2π
Typical components Performances
Grating coupler coupling loss: <3.5 dB
Strip waveguide Propagation loss: <2.5dB/cm
Mach–Zehnder interferometer Insertion loss: <0.1dB
Cross intersection Insertion loss:~0.1dB/cross Crosstalk: <-40dB
Thermal tunable phase shifter Tunability: > 2π
Typical components Performances
Grating coupler coupling loss: <1.2 dB
Strip waveguide Propagation loss: <2.5dB/cm
Mach–Zehnder interferometer Insertion loss: <0.1dB
Cross intersection Insertion loss:~0.1dB/cross Crosstalk: <-40dB
Thermal tunable phase shifter Tunability: > 2π

Design flexibility

SiPhotonIC offers numerous verified building blocks for your designs. Our complete Process Design Kit (PDK) is available in Synopsys.

News

Demonstration of chip-to-chip quantum teleportation

We report the first experimental demonstration of chip-to-chip teleportation of quantum states of light. Integrated quantum transceivers in silicon are able to prepare, manipulate, distribute and transceive quantum photonic states with high fidelity.

Generation and sampling of quantum states of light in a silicon chip

AbstractImplementing large instances of quantum algorithms requires the processing of many quantum information carriers in a hardware platform that supports the integration of different components. Although established semiconductor fabrication processes can integrate...